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| PHOTODIODE InGaAs PIN photodiode G8423/G8373/G5853 series Long wavelength type (up to 2.6 m) Features Applications l Long cut-off wavelength: 2.6 m l Gas analysis l 3-pin TO-18 package: low price l Spectrophotometer l Thermoelectrically cooled TO-8 package: low dark current l NIR (near infrared) photometry l Active area: 0.3 to 3 mm s Specifications / Absolute maximum ratings D im ensional Package outline Active area (mm) 0.3 0.5 1 3 0.3 1 3 0.3 1 3 Absolute maximum ratings Thermistor TE-cooler Reverse Operating Storage power allowable voltage temperature temperature dissipation Topr current Tstg VR (mW) (A) (V) (C) (C) Type No. Cooling G8423-03 G8423-05 G8373-01 G8373-03 G5853-103 G5853-11 G5853-13 G5853-203 G5853-21 G5853-23 TO-18 TO-5 TO-8 Non-cooled - - -40 to +85 -55 to +125 One-stage TE-cooled Two-stage TE-cooled 1.5 0.2 1.0 2 -40 to +70 -55 to +85 TO-8 s Electrical and optical characteristics (Typ. unless otherwise noted) M easurem ent Spectral Photo Peak condition response se nsitivity sensitivity range w a ve len gth S Element tem perature p =p (C) G8423-03 G8423-05 G8373-01 G8373-03 G5853-103 G5853-11 G5853-13 G5853-203 G5853-21 G5853-23 25 (m) 1.2 to 2.6 (m) (A/W) Dark current ID VR=1 V Typ. (A) 2 5 15 150 0.2 1.5 15 0.1 0.8 7.5 Max. (A) 20 50 75 1500 2 7.5 150 1 4 75 Cut-off freq ue ncy fc VR=1 V RL=50 -3 dB (MHz) 60 50 15 1.5 60 15 1.5 60 15 1.5 Terminal Shunt capacitance re sista nce Ct Rsh VR=1 V V R =10 m V f=1 MHz (pF) 40 60 200 1800 40 200 1800 40 200 1800 (k) 30 15 3 0.3 300 30 3 600 60 6 D =p NEP =p Type No. -10 1.2 to 2.57 2.3 1.1 -20 1.2 to 2.55 (cm *H z 1/2 /W ) (W/Hz1/2) 7 x 10-13 1 x 10-12 5 x 1010 2 x 10-12 8 x 10-12 3 x 10-13 11 1 x 10 7 x 10-13 2 x 10-12 2 x 10-13 11 2 x 10 5 x 10-13 1.8 x 10-12 1 InGaAs PIN photodiode s Spectral response (Typ.) 1.4 1.2 G8423/G8373/G5853 series s Photo sensitivity temperature characteristic (Typ.) 2 1.0 0.8 T= -20 C 0.6 T= -10 C 0.4 0.2 T=25 C 0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 TEMPERATURE COEFFICIENT (%/C) PHOTO SENSITIVITY (A/W) 1 0 -1 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 WAVELENGTH (m) KIRDB0216EA WAVELENGTH (m) KIRDB0206EA s Dark current vs. reverse voltage Non-cooled type 1 mA G8373-03 (Typ. Ta=25 C) TE-cooled type 100 A G5853-13 (T= -10 C) 10 A (Typ.) 100 A DARK CURRENT G8373-01 G8423-05 10 A DARK CURRENT G5853-23 (T= -20 C) 1 A G5853-11 (T= -10 C) G5853-21 (T= -20 C) 100 nA G5853-103 (T= -10 C) G5853-203 (T= -20 C) 1 A G8423-03 100 nA 0.01 0.1 1 10 10 nA 0.01 0.1 1 10 REVERSE VOLTAGE (V) KIRDB0238EA REVERSE VOLTAGE (V) KIRDB0218EA s Terminal capacitance vs. reverse voltage 10 nF (Typ. Ta=25 C, f=1 MHz) s Shunt resistance vs. element temperature 1 M (Typ. VR=10 mV) G8423-03 G5853-103/-203 100 k G8423-05 G8373-01 G5853-11/-21 G8373-03 G5853-13/-23 TERMINAL CAPACITANCE 1 nF G8373-01 G5853-11/-21 SHUNT RESISTANCE 10 k 1 k 100 pF G8423-05 100 G8423-03 G5853-103/-203 10 pF 0.1 1 10 10 -40 -20 G8373-03 G5853-13/-23 0 20 40 60 80 90 100 REVERSE VOLTAGE (V) KIRDB0239EA ELEMENT TEMPERATURE (C) KIRDB0240EA 2 InGaAs PIN photodiode s Thermistor temperature characteristic 106 (Typ.) G8423/G8373/G5853 series s Cooling characteristics of TE-cooler 40 (Typ. Ta=25 C, Thermal resistance of heatsink=3 C/W) ELEMENT TEMPERATURE (C) 20 ONE-STAGE TE-COOLED TYPE 0 RESISTANCE () 105 -20 10 4 TWO-STAGE -40 TE-COOLED TYPE 10 3 -60 -20 0 20 -40 0 0.4 0.8 1.2 1.6 ELEMENT TEMPERATURE (C) KIRDB0116EA CURRENT (A) KIRDB0231EA s Current vs. voltage characteristics of TE-cooler 1.6 1.4 1.2 ONE-STAGE TE-COOLED TYPE (Typ. Ta=25 C, Thermal resistance of heatsink=3 C/W) CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 TWO-STAGE TE-COOLED TYPE 0 0.5 1.0 1.5 VOLTAGE (V) KIRDB0115EA 3 InGaAs PIN photodiode s Dimensional outlines (unit: mm) G8423-03/-05, G8373-01 5.4 0.2 WINDOW 3.0 0.1 4.7 0.1 G8423/G8373/G5853 series G8373-03 9.2 0.2 8.1 0.1 WINDOW 5.9 0.1 0.15 MAX. 2.5 0.2 0.4 MAX. 2.7 0.2 13 MIN. 0.45 LEAD 2.5 0.2 0.45 LEAD 5.1 0.3 1.5 MAX. CASE CASE KIRDA0150EA 18 MIN. PHOTOSENSITIVE SURFACE 3.6 0.2 PHOTOSENSITIVE SURFACE 4.2 0.2 KIRDA0151EA G5853-103/-11/-13 15.3 0.2 14 0.2 4.4 0.2 6.4 0.2 G5853-203/-21/-23 15.3 0.2 14 0.2 6.7 0.2 10 0.2 12 MIN. WINDOW 10 0.2 WINDOW 10 0.2 12 MIN. PHOTOSENSITIVE SURFACE 0.45 LEAD 10.2 0.2 5.1 0.2 PHOTOSENSITIVE SURFACE 0.45 LEAD 10.2 0.2 DETECTOR (ANODE) DETECTOR (CATHODE) TE-COOLER (-) TE-COOLER (+) THERMISTOR 5.1 0.2 DETECTOR (ANODE) DETECTOR (CATHODE) TE-COOLER (-) TE-COOLER (+) THERMISTOR 5.1 0.2 KIRDA0029EB 5.1 0.2 KIRDA0031EB Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2001 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4 Cat. No. KIRD1048E01 Apr. 2001 DN |
Price & Availability of G5853-103
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